1.
A Fast Rewritable 90nm 512Mb NOR “B4-Flash” Memory with 8F2 Cell Size
By T. Ogura. Presented at 2011 Symposium on VLSI Circuits
2.
A True 6F2 NOR Flash Memory Cell Technology- Impact of Floating Gate B4-Flash on NOR Scaling –
By S. Shimizu. Presented at 2011 IMW
3.
Highly Reliable B4-Flash Technology for High Density Embedded NVM Application
By N. Ajika. Presented at 2011 IMV
4.
A 10k-Cycling Reliable 90nm Logic NVM “eCFlash”(embedded CMOS Flash) Technology
By S. Shukuri. Presented at 2011 IMV
5.
A 90nm Floating Gate "B4-Flash" Memory Technology - Breakthrough of the Gate Length Limitation on NOR Flash Memory -
By M. Mihara. Presented at 2009 IMW
6.
Advantage of Floating Gate B4-Flash over Retention Reliability after Cycling - Characterization by Variation of Transconductance -
By S. Shukuri. Presented at 2008 NVSM Workshop
7.
A Highly Reliable logic NVM "eCFlash (embedded CMOS Flash)"
Utilizing Differential Sense-Latch Cell with Charge-Trapping Storage
By T. Ogura. Presented at 2008 NVSM Workshop
8.
Floating Gate B4-Flash Memory Technology Utilizing Novel Programming Scheme - Highly Scalable, Efficient and Temperature Independent Programming -
By S. Shukuri. Presented at 2007 NVSM Workshop
9.
A 1.8V 4Mb Floating-Gate NOR Type B4-Flash Test Chip for 100MB/s
Programming Speed
By M. Mihara. Presented at 2007 NVSM Workshop
10.
A 60nm NOR Flash Memory Cell Technology Utilizing Back Bias Assisted
Band-to-Band Tunneling Induced Hot-Electron Injection (B4-Flash)
By S. Shukuri. Presented at 2006 Symposium on VLSI Technology
